7N60 1 / 9 mar.2015-rev.00 www.dyelec.com 1. gate 2. drain 3. source pin definition: product summary v ds (v) r ds(on) ( ?) i d (a) 600 1.0 @ v gs =10v 7 600v n-channel power mosfet absolute maximum ratings (t c =25c, unless otherwise specified) rds(on) < 1.0? @ vgs =10v, id = 3.7a fast switching capability lead free in compliance with eu rohs directive. green molding compound ordering information case: to-251,to-252,to-220,ito-220 to-262,to-263 package parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 7 a continuous drain current i d 7 a pulsed drain current (note 2) i dm 26 a avalanche energy single pulsed (note 3) e as 500 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation to-220/to-262/ to-263 p d 140 w ito-220 36 w to-251/to-252 54 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l = 19.5mh, i as = 7a, v dd = 50v, r g = 25 ?, starting t j = 25c 4. i sd 7a, di/dt 200a/s , v dd bv dss , starting t j = 25c part no. package packing dmp7N60-tu to-251 75pcs / tube dmd7N60-tr to-252 2.5kpcs / 13 reel dmt7N60-tu to-220 50pcs / tube dmf7N60-tu ito-220 50pcs / tube dmd7N60-tu to-252 75pcs / tube dmk7N60-tu to-262 50pcs / tube dmg7N60-tu to-263 50pcs / tube dmg7N60-tr to-263 800pcs / 13" reel block diagram d g s
2 / 9 thermal data 7N60 600v n-channel power mosfet electrical characteristics (t c =25c, unless otherwise specified) parameter symbol rating unit junction to ambient to-220/ito-220 to-262/to-263 ja 62.5 c/w to-251/ to-252 160 junction to case to-220/to-262/to-263 jc 1.25 c/w ito-220 3.5 to-251/ to-252 2.5 parameter symbol t est conditions typmin max unit off characteristics drain-source breakdown voltage bv dss gs v = 0v, i d = 250 a 600 v drain-source leakage current i dss v ds = 600v, v gs = 0v 1 a gate-source leakage current forward i gss v gs = 30v, v ds = 0v 100 na reversee vgs = -30v, v ds = 0v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25c 0.67 v/ on characteristics gate threshold voltage v gs ( th ) ds v = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) 0.83 1.0 ? dynamic characteristics input capacitance c iss v ds = 25v, v gs = 0v, f = 1mhz 1200 1400 pf output capacitance c oss pf 125 155 reverse transfer capacitance c rss pf 40 50 switching characteristics turn-on delay time t d( on ) 65 95 ns turn-on rise time t r ns 180 210 turn-off delay time t d( off ) ns 320 360 turn-off fall time t f 260 ns total gate charge q g v ds = 480v,i d = 7a, v gs = 10v (note 1, 2) 210 230 nc gate-source charge q gs nc 11 gate-drain charge q gd nc 38 source- drain diode ratings and characteristics drain-source diode forward voltage v sd 1.4 v maximum continuous drain-source diode forward current i s 7 a maximum pulsed drain-source diode forward current i sm 25 a reverse recovery time t rr v gs = 0 v, i s = 7a, di f /dt = 100 a/ s (note 1) 320 ns reverse recovery charge q rr c 2.4 notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2.. essentially independent of operating temperature mar.2015-rev.00 www.dyelec.com 220 v dd = 300v, i d =7a, r g = 25 ? (note 1, 2) v gs =0v,i s =7a gs v = 10v, i d = 3.7a
3 / 9 test circ uits and waveforms 7N60 600v n-channel power mosfet same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * sd controlled by pulse period * d.u.t.-de vice under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms mar.2015-rev.00 www.dyelec.com
4 / 9 test circuits and waveforms(cont.) 7N60 600v n-channel power mosfet switching test circuit switching waveforms gate charge test circuit gate charge waveform v dd bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit t p time unclamped inductive switching waveforms mar.2015-rev.00 www.dy elec.com
5 / 9 typical characteristics 7N60 600v n-channel power mosfet mar.2015-rev.00 www.dyelec.com 10 1 10 0.1 1 drain-to-source voltage, v ds (v) on-state characteristics 0.1 2 gate-source voltage, v gs (v) transfer characteristics 6 4 810 10 1 0.1 v gs top: 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v bottorm:5.5v notes: 1. 2 50s pulse test 2. t c =25c notes: 1. v ds =50v 2. 250s pulse test 0 0 drain-source on-resistance, r ds(on) ( ) drain current, i d (a) 24 1 2 4 5 6 on-resistance variation vs. drain current and gate voltage 3 6 8 10 12 1 0.1 source-drain voltage, v sd (v) reverse drain current, i dr (a) on state current vs. allowable case temperature 0.6 10 note: t j =25c notes: 1. v gs =0v 2. 250s test v gs =20v v gs =10v 0.2 0.4 0.8 1.0 1.2 1.4 1.6
6 / 9 t o - 220 mechanical drawing it o-220 m echanical drawing 7N60 600v n-channel power mosfet mar.2015-rev.00 www.dyelec.com
7N60 6 0 0v n-channel power mosfet 7 / 9 may,2015-rev.0 0 www.dyelec.com to-2 62 mechanical drawing to-2 63 mechanical drawing
8 / 9 to-251 mechanical drawing to-252 mechanical drawing 7N60 600v n-channel power mosfet mar.2015-rev.00 www.dyelec.com
9 / 9 notice specifications of the products displayed herein are subject to change without notice. diyi or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in diyi s terms and conditions of sale for such products, diyi assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of diyi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify diyi for any damages resulting from such improper use or sale. 7N60 600v n-channel power mosfet mar.2015-rev.00 www.dyelec.com
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